Raman characterization in Nitride

Raman characterization in Nitride

Bei Ma, Electrical and Electronic Engineering, Chiba University, Japan

Sep 11, 12:00 - 13:00

B9 L2 R2322 H1

Raman characterization in Nitride

Raman spectroscopy has been used extensively to characterize the strain, defect density, and doping levels in semiconductors. We will introduce Raman spectroscopy in Nitride materials to estimate the crystal quality, and carrier concentration, which is determined by vibration modes.